E3D08065G
DIODE SIL CARB 650V 22A TO263-2Manufacturer: Wolfspeed, Inc.
Categories: Single Diodes
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Wolfspeed, Inc. E-Series Silicon Carbide Schottky Diode, part number E3D08065G, offers a 650V reverse voltage and 22A average rectified current. This surface mount device, packaged in a TO-263-2 (TO-263AB) configuration, features a low forward voltage of 1.8V at 8A and exhibits no reverse recovery time above 500mA. Its low leakage current is rated at 51 µA @ 650 V, with a junction capacitance of 369pF @ 0V, 1MHz. The component operates across a junction temperature range of -55°C to 175°C. This automotive-grade Silicon Carbide Schottky diode is suited for demanding applications in power supply, electric vehicle, and industrial motor control sectors.
Additional Information
Series: E-SeriesRoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 369pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 22A |
| Supplier Device Package | TO-263-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 8 A |
| Current - Reverse Leakage @ Vr | 51 µA @ 650 V |
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