CSD01060E
DIODE SIL CARB 600V 4A TO252-2Manufacturer: Wolfspeed, Inc.
Categories: Single Diodes
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Wolfspeed, Inc. Zero Recovery™ series CSD01060E is a Silicon Carbide (SiC) Schottky diode. This surface-mount component, housed in a TO-252-3, DPAK package, offers a maximum DC reverse voltage of 600 V and an average rectified current of 4 A. It features a low forward voltage drop of 1.8 V at 1 A and a reverse leakage of 100 µA at 600 V. The diode exhibits zero reverse recovery time, a critical characteristic for high-frequency power conversion applications. Its operating junction temperature range is -55°C to 175°C. This component is suitable for applications in power supplies, electric vehicle charging, and industrial motor drives.
Additional Information
Series: Zero Recovery™RoHS Status: ROHS3 CompliantManufacturer Lead Time: 26 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 80pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 1 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 600 V |
| Qualification | - |
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