C2D05120E
DIODE SIL CARB 1.2KV 17.5A TO252Manufacturer: Wolfspeed, Inc.
Categories: Single Diodes
Quality Control: Learn More
Wolfspeed, Inc. Zero Recovery™ SiC Schottky diode, part number C2D05120E, offers a 1200V reverse voltage and 17.5A average rectified current capability. Featuring zero reverse recovery time (trr < 0 ns) for currents above 500mA, this device exhibits a low forward voltage drop of 1.8V at 5A. The typical junction capacitance is 455pF at 0V, measured at 1MHz. Designed for surface mounting in a TO-252-2 (DPAK) package, it operates across a junction temperature range of -55°C to 175°C. This component is suitable for applications requiring high efficiency and fast switching, including power supplies, motor drives, and solar inverters. Reverse leakage current is specified at 200 µA at 1200 V.
Additional Information
Series: Zero Recovery™RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 455pF @ 0V, 1MHz |
| Current - Average Rectified (Io) | 17.5A |
| Supplier Device Package | TO-252-2 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 5 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
| Qualification | - |
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