WAB300M12BM3
SIC 2N-CH 1200V 382A MODULEManufacturer: Wolfspeed, Inc.
Categories: FET, MOSFET Arrays
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Wolfspeed, Inc. WAB300M12BM3 is a Silicon Carbide (SiC) 2 N-Channel MOSFET module designed for demanding power applications. This chassis mount module features a 1200V (1.2kV) drain-to-source voltage rating and a continuous drain current capability of 382A at 25°C (Tc). The WAB300M12BM3 offers a low on-resistance of 5.2mOhm at 300A and 15V, with a typical gate charge of 908nC at 15V and input capacitance of 24500pF at 1000V. Its operating temperature range is -40°C to 175°C (TJ). This component is suitable for use in electric vehicle powertrains, industrial motor drives, and high-voltage power conversion systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: 30 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | -40°C ~ 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | - |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 382A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 24500pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 5.2mOhm @ 300A, 15V |
| Gate Charge (Qg) (Max) @ Vgs | 908nC @ 15V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 3.6V @ 92mA |
| Supplier Device Package | Module |
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