CAS325M12HM2
MOSFET 2N-CH 1200V 444A MODULEManufacturer: Wolfspeed, Inc.
Categories: FET, MOSFET Arrays
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Wolfspeed, Inc. Z-REC™ CAS325M12HM2 is a 1200V, 444A Silicon Carbide (SiC) MOSFET module featuring a dual N-channel half-bridge configuration. This device offers a low on-resistance of 4.3 mOhm at 400A and 20V Vgs, with a maximum continuous drain current of 444A at 25°C (Tc). The CAS325M12HM2 has a high junction temperature rating of 175°C and a maximum power dissipation of 3000W. Key parameters include a gate charge of 1127nC at 20V and input capacitance of 19500pF at 1000V. This module is suitable for high-power applications in industries such as electric vehicles, renewable energy, and industrial motor drives where efficient power conversion and thermal management are critical.
Additional Information
Series: Z-REC™RoHS Status: RoHS CompliantManufacturer Lead Time: 19 week(s)Product Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | 175°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 3000W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 444A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 19500pF @ 1000V |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 400A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 1127nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 4V @ 105mA |
| Supplier Device Package | Module |
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