CAS300M12BM2
SIC 2N-CH 1200V 423A MODULEManufacturer: Wolfspeed, Inc.
Categories: FET, MOSFET Arrays
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Wolfspeed, Inc. Z-FET™ CAS300M12BM2 is a Silicon Carbide (SiC) planar MOSFET half-bridge module. This component features a drain-source voltage (Vdss) rating of 1200V (1.2kV) and a continuous drain current (Id) of 423A at 25°C (Tc). The on-resistance (Rds On) is a maximum of 5.7mOhm at 300A and 20V gate-source voltage. Input capacitance (Ciss) is 19500pF maximum at 800V, with a gate charge (Qg) of 1025nC maximum at 20V. The threshold voltage (Vgs(th)) is typically 2.3V at 15mA. This module is designed for chassis mounting and operates at a maximum junction temperature of 150°C. Power dissipation is rated at 1660W. This device is utilized in high-power applications within the electric vehicle, industrial motor drive, and renewable energy sectors.
Additional Information
Series: Z-FET™RoHS Status: RoHS CompliantManufacturer Lead Time: 34 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | Module, Screw Terminals |
| Mounting Type | Chassis Mount |
| Configuration | 2 N-Channel (Half Bridge) |
| Operating Temperature | 150°C (TJ) |
| Technology | Silicon Carbide (SiC) |
| Power - Max | 1660W |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Current - Continuous Drain (Id) @ 25°C | 423A (Tc) |
| Input Capacitance (Ciss) (Max) @ Vds | 19500pF @ 800V |
| Rds On (Max) @ Id, Vgs | 5.7mOhm @ 300A, 20V |
| Gate Charge (Qg) (Max) @ Vgs | 1025nC @ 20V |
| FET Feature | - |
| Vgs(th) (Max) @ Id | 2.3V @ 15mA (Typ) |
| Supplier Device Package | Module |
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