Home

Products

Discrete Semiconductor Products

Transistors

FETs, MOSFETs

FET, MOSFET Arrays

CAS120M12BM2

Banner
productimage

CAS120M12BM2

MOSFET 2N-CH 1200V 193A MODULE

Manufacturer: Wolfspeed, Inc.

Categories: FET, MOSFET Arrays

Quality Control: Learn More

The Wolfspeed, Inc. Z-Rec® CAS120M12BM2 is a 1200V (1.2kV) N-Channel MOSFET array designed for high-power applications. This chassis mount module features a continuous drain current capability of 193A (Tc) and a maximum power dissipation of 925W. With a low on-resistance of 16mOhm @ 120A, 20V, this Silicon Carbide (SiC) device offers efficient switching performance. Key parameters include a gate charge (Qg) of 378nC @ 20V and input capacitance (Ciss) of 6470pF @ 800V. The CAS120M12BM2 operates across a temperature range of -40°C to 150°C (TJ) and is suitable for demanding power conversion systems in industries such as electric vehicles, industrial motor drives, and renewable energy.

Additional Information

Series: Z-Rec®RoHS Status: RoHS CompliantManufacturer Lead Time: 34 week(s)Product Status: Not For New DesignsPackaging: BulkDatasheet:
Technical Details:
PackagingBulk
Package / CaseModule
Mounting TypeChassis Mount
Configuration2 N-Channel (Half Bridge)
Operating Temperature-40°C ~ 150°C (TJ)
TechnologySilicon Carbide (SiC)
Power - Max925W
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C193A (Tc)
Input Capacitance (Ciss) (Max) @ Vds6470pF @ 800V
Rds On (Max) @ Id, Vgs16mOhm @ 120A, 20V
Gate Charge (Qg) (Max) @ Vgs378nC @ 20V
FET Feature-
Vgs(th) (Max) @ Id2.6V @ 6mA (Typ)
Supplier Device PackageModule

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

CAPTCHA

Clients Also Buy
product image
C3D06060F

DIODE SIC 600V 11.5A TO220-F2

product image
C3D06060A

DIODE SIL CARB 600V 19A TO220-2

product image
C3D04060E

DIODE SIL CARB 600V 13.5A TO252