E6D40065D
DIODE SIC 650V 63A TO247Manufacturer: Wolfspeed, Inc.
Categories: Diode Arrays
Quality Control: Learn More
Wolfspeed, Inc. E Series Silicon Carbide (SiC) Schottky diode array, part number E6D40065D. This component features a common cathode configuration with two diodes, providing a 650V reverse voltage rating and a 63A average rectified current per diode. Designed with advanced SiC Schottky technology, it exhibits a low forward voltage drop of 1.5V at 20A and a minimal reverse leakage current of 200 µA at 650V. The device boasts an exceptional reverse recovery characteristic with no measurable recovery time above 500mA. Packaged in a TO-247-3 through-hole configuration, this diode array is suitable for high-power applications in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: ERoHS Status: unknownManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Cathode |
| Current - Average Rectified (Io) (per Diode) | 63A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.5 V @ 20 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 650 V |
| Qualification | - |
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