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E4D20120D

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E4D20120D

DIODE SIL CARB 1.2KV 33A TO247-3

Manufacturer: Wolfspeed, Inc.

Categories: Diode Arrays

Quality Control: Learn More

Wolfspeed, Inc. E-Series Diode Array, part number E4D20120D, is a Silicon Carbide Schottky diode featuring a 1200 V reverse voltage and a 33 A average rectified current per diode. This device offers a common anode configuration with a fast switching speed characterized by zero reverse recovery time for currents above 500 mA. The forward voltage drop is 1.8 V maximum at 10 A. Packaged in a TO-247-3 through-hole configuration, it operates across a junction temperature range of -55°C to 175°C. The reverse leakage current is 200 µA at 1200 V. This component is suitable for demanding applications in the automotive sector.

Additional Information

Series: E-SeriesRoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: TubeDatasheet:
Technical Details:
PackagingTube
Package / CaseTO-247-3
Mounting TypeThrough Hole
SpeedNo Recovery Time > 500mA (Io)
Reverse Recovery Time (trr)0 ns
TechnologySiC (Silicon Carbide) Schottky
Diode Configuration1 Pair Common Anode
Current - Average Rectified (Io) (per Diode)33A
Supplier Device PackageTO-247-3
Operating Temperature - Junction-55°C ~ 175°C
GradeAutomotive
Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 10 A
Current - Reverse Leakage @ Vr200 µA @ 1200 V

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