E3D30065D
DIODE SIL CARB 650V 42A TO247-3Manufacturer: Wolfspeed, Inc.
Categories: Diode Arrays
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Wolfspeed, Inc. E-Series SiC Schottky Diode Array, part number E3D30065D, offers a robust 650V blocking voltage and 42A forward current capability per diode. This device features a common anode configuration with a single pair of diodes, exhibiting a low forward voltage drop of 1.8V at 16A and a minimal reverse leakage of 95 µA at 650V. The silicon carbide technology delivers exceptional performance characteristics, including a reverse recovery time of 0 ns, indicating no significant switching losses. Housed in a TO-247-3 through-hole package, the E3D30065D is suitable for demanding applications in automotive, industrial power supplies, and electric vehicle charging infrastructure where high efficiency and reliability are paramount. The operating junction temperature range is -55°C to 175°C.
Additional Information
Series: E-SeriesRoHS Status: ROHS3 CompliantManufacturer Lead Time: 70 week(s)Product Status: ActivePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Diode Configuration | 1 Pair Common Anode |
| Current - Average Rectified (Io) (per Diode) | 42A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | Automotive |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 16 A |
| Current - Reverse Leakage @ Vr | 95 µA @ 650 V |
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