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W987D2HBJX7E

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W987D2HBJX7E

IC DRAM 128MBIT PAR 90VFBGA

Manufacturer: Winbond Electronics

Categories: Memory

Quality Control: Learn More

The Winbond Electronics W987D2HBJX7E is a 128Mbit Low Power Double Data Rate (LPDDR) SDRAM memory integrated circuit. This device features a parallel interface and operates at a clock frequency of 133 MHz with an access time of 5.4 ns. The memory organization is 4M x 32, providing a total capacity of 128Mbits. Manufactured by Winbond Electronics, this volatile memory component is housed in a 90-VFBGA (8x13) package, suitable for surface mounting. It operates within a supply voltage range of 1.7V to 1.95V and has a word/page write cycle time of 15ns. The W987D2HBJX7E is designed for applications in consumer electronics, mobile devices, and automotive systems requiring high-speed memory solutions. The operating temperature range is -25°C to 85°C (TC).

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tray
Technical Details:
PackagingTray
Package / Case90-TFBGA
Mounting TypeSurface Mount
Memory Size128Mbit
Memory TypeVolatile
Operating Temperature-25°C ~ 85°C (TC)
Voltage - Supply1.7V ~ 1.95V
TechnologySDRAM - Mobile LPSDR
Clock Frequency133 MHz
Memory FormatDRAM
Supplier Device Package90-VFBGA (8x13)
Write Cycle Time - Word, Page15ns
Memory InterfaceParallel
Access Time5.4 ns
Memory Organization4M x 32
ProgrammableNot Verified

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