Home

Products

Integrated Circuits (ICs)

Memory

Memory

W97BH2MBVA2E

Banner
productimage

W97BH2MBVA2E

IC DRAM 2GBIT HSUL 12 134VFBGA

Manufacturer: Winbond Electronics

Categories: Memory

Quality Control: Learn More

Winbond Electronics W97BH2MBVA2E is a 2Gbit Mobile LPDDR2-S4B Synchronous DRAM. This volatile memory component operates at 400 MHz with an HSUL_12 interface. The memory organization is 64M x 32, and it features a write cycle time of 15ns. The W97BH2MBVA2E supports dual voltage ranges, from 1.14V to 1.3V and 1.7V to 1.95V. It is supplied in a 134-VFBGA (10x11.5) package for surface mounting and operates within a temperature range of -25°C to 85°C (TC). This component is suitable for applications in consumer electronics and mobile devices.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TrayDatasheet:
Technical Details:
PackagingTray
Package / Case134-VFBGA
Mounting TypeSurface Mount
Memory Size2Gbit
Memory TypeVolatile
Operating Temperature-25°C ~ 85°C (TC)
Voltage - Supply1.14V ~ 1.3V, 1.7V ~ 1.95V
TechnologySDRAM - Mobile LPDDR2-S4B
Clock Frequency400 MHz
Memory FormatDRAM
Supplier Device Package134-VFBGA (10x11.5)
Write Cycle Time - Word, Page15ns
Memory InterfaceHSUL_12
Memory Organization64M x 32
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
W632GU6MB15I

IC DRAM 2GBIT PAR 96VFBGA

product image
W25P80VSSIG

IC FLASH 8MBIT SPI 50MHZ 8SOIC

product image
W25Q16DWZPIG

IC FLASH 16MBIT SPI/QUAD 8WSON