W97AH6NBVA2E TR
IC DRAM 1GBIT HSUL 12 134VFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics W97AH6NBVA2E-TR is a 1Gbit SDRAM memory device leveraging LPDDR2-S4B technology. This component features a HSUL_12 interface and operates at a clock frequency of 400 MHz, with a memory organization of 64M x 16. Designed for surface mounting, it is supplied in a compact 134-VFBGA package with dimensions of 10x11.5 mm, presented on a tape and reel. The operating voltage range is 1.14V to 1.3V and 1.7V to 1.95V, with a typical write cycle time of 15ns. This volatile memory solution is suitable for applications in the mobile and consumer electronics industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 134-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Voltage - Supply | 1.14V ~ 1.3V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR2-S4B |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 134-VFBGA (10x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | HSUL_12 |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
W25P80VSSIG
IC FLASH 8MBIT SPI 50MHZ 8SOIC
W25Q128BVFSG
IC FLASH 128MBIT SPI/QUAD 16SOIC
W29N01HZBINA
IC FLASH 1GBIT PARALLEL 63VFBGA
