W97AH6NBVA1E TR
IC DRAM 1GBIT HSUL 12 134VFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics W97AH6NBVA1E-TR is a 1Gbit Low Power Double Data Rate 2 (LPDDR2-S4B) SDRAM device. This volatile memory component operates at a clock frequency of 533 MHz and utilizes the HSUL_12 interface. The memory organization is 64M x 16, providing substantial data storage. It supports a wide voltage range, with a primary operating voltage between 1.14V and 1.3V, and an additional range of 1.7V to 1.95V. The component features a short write cycle time of 15ns for word/page operations. Packaged in a 134-VFBGA (10x11.5) for surface mounting, this memory solution is suitable for applications requiring high performance and low power consumption, commonly found in mobile devices, automotive systems, and networking equipment. The operating temperature range is -40°C to 85°C (TC).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 134-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 85°C (TC) |
| Voltage - Supply | 1.14V ~ 1.3V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR2-S4B |
| Clock Frequency | 533 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 134-VFBGA (10x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | HSUL_12 |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
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