W979H2KBVX2E TR
IC DRAM 512MBIT HSUL 12 134VFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
The Winbond Electronics W979H2KBVX2E-TR is a 512Mbit SDRAM, specifically a Mobile LPDDR2-S4B memory IC. This component features an HSUL-12 memory interface operating at a clock frequency of 400 MHz. Its memory organization is 16M x 32, providing a substantial capacity for high-performance applications. The device operates within a voltage range of 1.14V to 1.3V and 1.7V to 1.95V. Packaged in a 134-VFBGA (10x11.5) for surface mounting, it is supplied on tape and reel. This memory solution is suitable for demanding applications in the automotive and consumer electronics industries. The write cycle time for word and page operations is 15ns.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 134-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 512Mbit |
| Memory Type | Volatile |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Voltage - Supply | 1.14V ~ 1.3V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR2-S4B |
| Clock Frequency | 400 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 134-VFBGA (10x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | HSUL_12 |
| Memory Organization | 16M x 32 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
W25Q256JVCIM
IC FLASH 256MBIT SPI 24TFBGA
W972GG8KS-18
IC DRAM 2GBIT PARALLEL 60WBGA
W25X16AVSNIG
IC FLASH 16MBIT SPI 75MHZ 8SOIC
