W947D6HBHX5E
IC DRAM 128MBIT LVCMOS 60VFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics W947D6HBHX5E is a 128Mbit SDRAM memory component designed for mobile applications. This device features LVCMOS memory interface technology and operates at a clock frequency of 200 MHz with an access time of 5 ns. The memory organization is 8M x 16, and it utilizes a 60-VFBGA (8x9) package for surface mounting. The operating voltage range is 1.7V to 1.95V, with a write cycle time of 15ns. This component is suitable for embedded systems and consumer electronics.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 60-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 128Mbit |
| Memory Type | Volatile |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR |
| Clock Frequency | 200 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 60-VFBGA (8x9) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | LVCMOS |
| Access Time | 5 ns |
| Memory Organization | 8M x 16 |
| Programmable | Not Verified |
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