W947D2HBJX6E TR
IC DRAM 128MBIT LVCMOS 90VFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics W947D2HBJX6E-TR is a 128Mbit SDRAM Mobile LPDDR memory component. This device features an LVCMOS interface and operates at a clock frequency of 166 MHz with an access time of 5 ns. The memory organization is 4M x 32. The W947D2HBJX6E-TR is supplied in a 90-VFBGA (8x13) package, suitable for surface mounting. It operates within a voltage range of 1.7V to 1.95V and has a write cycle time of 15ns. This component is commonly utilized in applications within the mobile and consumer electronics industries. The packaging is provided in tape and reel.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 90-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 128Mbit |
| Memory Type | Volatile |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR |
| Clock Frequency | 166 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 90-VFBGA (8x13) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | LVCMOS |
| Access Time | 5 ns |
| Memory Organization | 4M x 32 |
| Programmable | Not Verified |
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