W947D2HBJX6E
IC DRAM 128MBIT LVCMOS 90VFBGAManufacturer: Winbond Electronics
Categories: Memory
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Winbond Electronics W947D2HBJX6E is a 128Mbit SDRAM memory IC designed for mobile applications. This component utilizes LVCMOS interface technology and operates at a clock frequency of 166 MHz with an access time of 5 ns. The memory organization is 4M x 32, providing a substantial capacity for data storage. Encased in a 90-VFBGA (8x13) package, it supports surface mount installation. The voltage supply range is 1.7V to 1.95V, and it features a write cycle time of 15ns for page operations. This volatile memory component is suitable for demanding applications within the consumer electronics and industrial automation sectors. The operating temperature range is -25°C to 85°C (TC).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TrayDownload Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 90-TFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 128Mbit |
| Memory Type | Volatile |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Voltage - Supply | 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR |
| Clock Frequency | 166 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 90-VFBGA (8x13) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | LVCMOS |
| Access Time | 5 ns |
| Memory Organization | 4M x 32 |
| Programmable | Not Verified |
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