W66BQ6NBUAHJ
IC DRAM 2GBIT LVSTL 11 200WFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics W66BQ6NBUAHJ is a 2Gbit Mobile LPDDR4X SDRAM device. This memory component operates at a 2.133 GHz clock frequency with an access time of 3.5 ns. The device features an LVSTL_11 memory interface and is organized as 128M x 16. It supports a supply voltage range of 1.06V to 1.17V and 1.7V to 1.95V. The W66BQ6NBUAHJ is housed in a 200-WFBGA (10x14.5) package, suitable for surface mount applications. Operating across an industrial temperature range of -40°C to 105°C (TC), this volatile memory solution is utilized in mobile devices, consumer electronics, and automotive applications requiring high-speed data storage.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 200-WFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 2.133 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL_11 |
| Access Time | 3.5 ns |
| Memory Organization | 128M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
W25P80VSSIG
IC FLASH 8MBIT SPI 50MHZ 8SOIC
W25Q128BVFSG
IC FLASH 128MBIT SPI/QUAD 16SOIC
W29N01HZBINA
IC FLASH 1GBIT PARALLEL 63VFBGA
