W66BQ6NBUAGJ
IC DRAM 2GBIT LVSTL 11 200WFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics W66BQ6NBUAGJ is a 2Gbit Mobile LPDDR4X SDRAM component. This volatile memory device operates at a clock frequency of 1.866 GHz with an access time of 3.5 ns. The memory organization is 128M x 16, utilizing an LVSTL_11 interface. It supports dual voltage supplies, ranging from 1.06V to 1.17V and 1.7V to 1.95V. The component is housed in a 200-WFBGA package measuring 10x14.5mm, suitable for surface mount applications. With a write cycle time of 18ns, this memory solution is designed for demanding applications across mobile, automotive, and IoT sectors. The operating temperature range is -40°C to 105°C (TC).
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 200-WFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 1.866 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL_11 |
| Access Time | 3.5 ns |
| Memory Organization | 128M x 16 |
| Programmable | Not Verified |
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