W66BQ6NBUAFJ TR
IC DRAM 2GBIT LVSTL 11 200WFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics W66BQ6NBUAFJ-TR is a 2Gbit Mobile LPDDR4X SDRAM device, featuring a 128M x 16 memory organization. This volatile memory component operates at a clock frequency of 1.6 GHz with an access time of 3.5 ns and a write cycle time of 18ns. It utilizes LVSTL_11 signaling and supports a wide supply voltage range of 1.06V to 1.95V. The W66BQ6NBUAFJ-TR is supplied in a 200-WFBGA (10x14.5) surface mount package and operates within an industrial temperature range of -40°C to 105°C. This component is commonly implemented in mobile devices, automotive electronics, and high-performance computing applications requiring efficient data storage and retrieval.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 200-WFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 1.6 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL_11 |
| Access Time | 3.5 ns |
| Memory Organization | 128M x 16 |
| Programmable | Not Verified |
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