W66BQ6NBUAFJ
IC DRAM 2GBIT LVSTL 11 200WFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics W66BQ6NBUAFJ. This 2Gbit LPDDR4X SDRAM device offers a 1.6 GHz clock frequency with a 3.5 ns access time. Featuring a 128M x 16 memory organization, it utilizes LVSTL_11 interface signaling. The component operates within a voltage range of 1.06V to 1.17V and 1.7V to 1.95V, supporting a 18 ns write cycle time. Supplied in a 200-WFBGA (10x14.5) package, this surface-mount device is rated for operation from -40°C to 105°C (TC). Applications include mobile devices, automotive systems, and high-performance computing.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 28 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 200-WFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 1.6 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL_11 |
| Access Time | 3.5 ns |
| Memory Organization | 128M x 16 |
| Programmable | Not Verified |
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