W66BP6NBUAFJ
IC DRAM 2GBIT LVSTL 11 200WFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics W66BP6NBUAFJ is a 2 Gbit SDRAM, specifically a Mobile LPDDR4 memory component. This device operates at a clock frequency of 1.6 GHz with an access time of 3.5 ns. It features a LVSTL_11 memory interface and is organized as 128M x 16. The memory type is volatile, and it requires supply voltages ranging from 1.06V to 1.17V and 1.7V to 1.95V. The write cycle time for word and page operations is 18 ns. This component is designed for surface mount applications and comes in a 200-WFBGA package, measuring 10x14.5 mm. The operating temperature range is -40°C to 105°C (TC). This memory IC is suitable for high-performance applications in consumer electronics and mobile devices.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 24 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 200-WFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR4 |
| Clock Frequency | 1.6 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL_11 |
| Access Time | 3.5 ns |
| Memory Organization | 128M x 16 |
| Programmable | Not Verified |
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