W66BM6NBUAGJ TR
IC DRAM 2GBIT LVSTL 11 200WFBGAManufacturer: Winbond Electronics
Categories: Memory
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Winbond Electronics W66BM6NBUAGJ-TR is a 2Gbit SDRAM memory component operating at 1.866 GHz with an access time of 3.5 ns. This LPDDR4X device utilizes an LVSTL_11 interface and is organized as 128M x 16. It features dual supply voltage ranges, 1.06V to 1.17V and 1.7V to 1.95V, and a write cycle time of 18ns. The component is supplied in a 200-WFBGA package with dimensions of 10x14.5 mm, designed for surface mounting via tape and reel. Operating across an extended temperature range of -40°C to 105°C (TC), this volatile memory solution is suitable for demanding applications in the mobile, automotive, and consumer electronics industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 200-WFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 1.866 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL_11 |
| Access Time | 3.5 ns |
| Memory Organization | 128M x 16 |
| Programmable | Not Verified |
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