W66BM6NBUAFJ TR
IC DRAM 2GBIT LVSTL 11 200WFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics W66BM6NBUAFJ-TR is a 2Gbit SDRAM - Mobile LPDDR4X memory IC. This component features a 128M x 16 organization and operates with LVSTL_11 interface signaling. It boasts a clock frequency of 1.6 GHz and an access time of 3.5 ns, with a word/page write cycle time of 18 ns. The W66BM6NBUAFJ-TR supports a supply voltage range of 1.06V to 1.17V and 1.7V to 1.95V. Encased in a 200-WFBGA (10x14.5) package, it is suitable for surface mount applications. The operating temperature range for this device is -40°C to 105°C (TC). This memory solution is commonly utilized in mobile computing, automotive, and consumer electronics sectors. The component is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 200-WFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 2Gbit |
| Memory Type | Volatile |
| Operating Temperature | -40°C ~ 105°C (TC) |
| Voltage - Supply | 1.06V ~ 1.17V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR4X |
| Clock Frequency | 1.6 GHz |
| Memory Format | DRAM |
| Supplier Device Package | 200-WFBGA (10x14.5) |
| Write Cycle Time - Word, Page | 18ns |
| Memory Interface | LVSTL_11 |
| Access Time | 3.5 ns |
| Memory Organization | 128M x 16 |
| Programmable | Not Verified |
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