Home

Products

Integrated Circuits (ICs)

Memory

Memory

W66BL6NBUAHJ TR

Banner
productimage

W66BL6NBUAHJ TR

IC DRAM 2GBIT LVSTL 11 200WFBGA

Manufacturer: Winbond Electronics

Categories: Memory

Quality Control: Learn More

Winbond Electronics W66BL6NBUAHJ-TR is a 2Gbit Mobile LPDDR4 SDRAM component. This device operates with a clock frequency of 2.133 GHz and features an access time of 3.5 ns. The memory organization is 128M x 16, utilizing an LVSTL_11 interface. It supports dual voltage rails, with supply voltages ranging from 1.06V to 1.17V and 1.7V to 1.95V. The write cycle time for word/page operations is 18ns. Packaged in a 200-WFBGA (10x14.5) with surface mount technology, this component is supplied on tape and reel. Its operating temperature range is -40°C to 105°C (TC). This memory solution is commonly found in mobile devices, automotive electronics, and networking equipment.

Additional Information

Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: Not For New DesignsPackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case200-WFBGA
Mounting TypeSurface Mount
Memory Size2Gbit
Memory TypeVolatile
Operating Temperature-40°C ~ 105°C (TC)
Voltage - Supply1.06V ~ 1.17V, 1.7V ~ 1.95V
TechnologySDRAM - Mobile LPDDR4
Clock Frequency2.133 GHz
Memory FormatDRAM
Supplier Device Package200-WFBGA (10x14.5)
Write Cycle Time - Word, Page18ns
Memory InterfaceLVSTL_11
Access Time3.5 ns
Memory Organization128M x 16
ProgrammableNot Verified

Request a Quote

Name (required)

Phone (required)

Work Email (required)

Country (required)

Company Name (required)

Open to other brands

CAPTCHA

Clients Also Buy
product image
W25P80VSSIG

IC FLASH 8MBIT SPI 50MHZ 8SOIC

product image
W25Q128BVFSG

IC FLASH 128MBIT SPI/QUAD 16SOIC

product image
W29N01HZBINA

IC FLASH 1GBIT PARALLEL 63VFBGA