W63AH6NBVABE
IC DRAM 1GBIT HSUL 12 178VFBGAManufacturer: Winbond Electronics
Categories: Memory
Quality Control: Learn More
Winbond Electronics' W63AH6NBVABE is a 1Gbit LPDDR3 SDRAM memory component. This device operates at an 800 MHz clock frequency with a 5.5 ns access time and utilizes the HSUL_12 interface. The memory organization is 64M x 16, housed in a 178-VFBGA package measuring 11x11.5 mm. It supports a dual voltage supply range of 1.14V to 1.3V and 1.7V to 1.95V. Designed for surface mounting, this volatile memory component has a write cycle time of 15ns and an operating temperature range of -25°C to 85°C (TC). This memory solution is suitable for applications in the consumer electronics and mobile devices industries.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: TrayDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tray |
| Package / Case | 178-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Voltage - Supply | 1.14V ~ 1.3V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR3 |
| Clock Frequency | 800 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 178-VFBGA (11x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | HSUL_12 |
| Access Time | 5.5 ns |
| Memory Organization | 64M x 16 |
| Programmable | Not Verified |
Request a Quote
Clients Also Buy
W956D8MBYA5I
IC DRAM 64MBIT HYPERBUS 24TFBGA
W967D6HBGX7I TR
IC PSRAM 128MBIT PAR 54VFBGA
W25Q32BVSFJG TR
IC FLASH 32MBIT SPI/QUAD 16SOIC
