W63AH2NBVABE TR
IC DRAM 1GBIT HSUL 12 178VFBGAManufacturer: Winbond Electronics
Categories: Memory
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Winbond Electronics W63AH2NBVABE-TR is a 1Gbit Mobile LPDDR3 SDRAM component. This volatile memory device operates at a clock frequency of 800 MHz with an access time of 5.5 ns. It features an HSUL_12 memory interface and is organized as 32M x 32. The component supports a wide voltage range from 1.14V to 1.3V and 1.7V to 1.95V, with a write cycle time of 15ns. Packaged in a 178-VFBGA (11x11.5) for surface mounting, it operates within a temperature range of -25°C to 85°C (TC). This component is suitable for applications in mobile devices and embedded systems requiring high-speed, low-power memory.
Additional Information
Series: -RoHS Status: ROHS3 CompliantManufacturer Lead Time: 16 week(s)Product Status: ActivePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 178-VFBGA |
| Mounting Type | Surface Mount |
| Memory Size | 1Gbit |
| Memory Type | Volatile |
| Operating Temperature | -25°C ~ 85°C (TC) |
| Voltage - Supply | 1.14V ~ 1.3V, 1.7V ~ 1.95V |
| Technology | SDRAM - Mobile LPDDR3 |
| Clock Frequency | 800 MHz |
| Memory Format | DRAM |
| Supplier Device Package | 178-VFBGA (11x11.5) |
| Write Cycle Time - Word, Page | 15ns |
| Memory Interface | HSUL_12 |
| Access Time | 5.5 ns |
| Memory Organization | 32M x 32 |
| Programmable | Not Verified |
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