WNSC401200CWQ
DIODE SIL CARB 1.2KV 40A TO247-3Manufacturer: WeEn Semiconductors
Categories: Single Diodes
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The WeEn Semiconductors WNSC401200CWQ is a Silicon Carbide (SiC) Schottky diode housed in a TO-247-3 package. This component offers a maximum DC reverse voltage of 1200V and a continuous forward current (Io) of 40A. It exhibits a forward voltage (Vf) of 1.75V at 20A and a reverse leakage current of 200 µA at 1200V. The diode features no discernible reverse recovery time above 500mA, indicating efficient switching performance. Its capacitance at 1V and 1MHz is 810pF. Operating at a maximum junction temperature of 175°C, this through-hole mounted device is suitable for demanding applications in automotive, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 810pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 40A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.75 V @ 20 A |
| Current - Reverse Leakage @ Vr | 200 µA @ 1200 V |
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