WNSC201200WQ
DIODE SIL CARB 1.2KV 20A TO247-2Manufacturer: WeEn Semiconductors
Categories: Single Diodes
Quality Control: Learn More
WeEn Semiconductors WNSC201200WQ is a 1200V Silicon Carbide Schottky diode with a continuous forward current rating of 20A. This through-hole component, housed in a TO-247-2 package, offers exceptional performance characteristics for demanding power applications. Key specifications include a maximum forward voltage drop of 1.6V at 20A and a reverse leakage current of 220 µA at its maximum reverse voltage. The device boasts a low junction capacitance of 1020pF at 1V and exhibits no discernible reverse recovery time above 500mA, indicative of its advanced SiC Schottky technology. Operating at junction temperatures up to 175°C (Max), this diode is well-suited for use in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 1020pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 20 A |
| Current - Reverse Leakage @ Vr | 220 µA @ 1200 V |
Request a Quote
Clients Also Buy
NXPSC08650X6Q
DIODE SIL CARBIDE 650V 8A TO220F
WNSC2D06650DJ
DIODE SIL CARBIDE 650V 6A DPAK
WNSC051200Q
DIODE SIL CARB 1.2KV 5A TO220AC
