WNSC201200CWQ
DIODE SIL CARB 1.2KV 20A TO247-3Manufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors WNSC201200CWQ is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This through-hole component, housed in a TO-247-3 package, offers a maximum DC reverse voltage of 1200V and an average rectified current handling capability of 20A. Featuring a low forward voltage drop of 1.6V at 10A, the WNSC201200CWQ exhibits exceptional switching performance with zero reverse recovery time, crucial for efficient power conversion. Its robust construction allows for operation at junction temperatures up to 175°C (Max). Typical applications include power factor correction, inverters, and motor drives within the industrial and automotive sectors. The device's capacitance at 1V and 1MHz is rated at 510pF, with a reverse leakage current of 110 µA at its maximum reverse voltage.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 510pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-247-3 |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Current - Reverse Leakage @ Vr | 110 µA @ 1200 V |
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