WNSC12650WQ
DIODE SIL CARB 650V 12A TO247-2Manufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors WNSC12650WQ is a 650V, 12A Silicon Carbide (SiC) Schottky diode. This through-hole component, packaged in a TO-247-2, offers a forward voltage of 1.7V at 12A and a reverse leakage current of 60 µA at 650V. Featuring a low junction capacitance of 328pF @ 1V, 1MHz, it is identified by its extremely fast switching characteristic with no discernible reverse recovery time above 500mA. The operating junction temperature can reach up to 175°C. This device is suitable for applications in high-efficiency power conversion systems, including electric vehicle charging, server power supplies, and industrial motor drives.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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