WNSC12650T6J
DIODE SIL CARBIDE 650V 12A 5DFNManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors WNSC12650T6J is a Silicon Carbide (SiC) Schottky diode designed for demanding power applications. This surface mount component, housed in an 8x8mm 5-DFN package, offers a 650V reverse voltage rating and a continuous average rectified current capability of 12A. It features a low forward voltage drop of 1.8V at 12A and a minimal reverse leakage current of 60 µA at its maximum reverse voltage. The WNSC12650T6J exhibits zero reverse recovery time, contributing to improved efficiency and reduced switching losses. Its high operating junction temperature of 175°C makes it suitable for power factor correction, electric vehicle charging, industrial power supplies, and renewable energy systems. Packaged in tape and reel, this device is engineered for high-volume production environments.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 12 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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