WNSC10650WQ
DIODE SIL CARB 650V 10A TO247-2Manufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors WNSC10650WQ is a Silicon Carbide (SiC) Schottky diode rated for 650 V reverse voltage and 10 A average rectified current. This through-hole component, housed in a TO-247-2 package, features a low forward voltage drop of 1.7 V at 10 A and a reverse leakage current of 60 µA at 650 V. Its SiC technology enables a maximum junction operating temperature of 175°C and exhibits no significant reverse recovery time, making it suitable for high-frequency switching applications commonly found in power supplies, motor control, and renewable energy systems. The device offers a capacitance of 328 pF at 1 V and 1 MHz.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-247-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-247-2 |
| Operating Temperature - Junction | 175°C |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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