WNSC10650T6J
DIODE SIL CARBIDE 650V 10A 5DFNManufacturer: WeEn Semiconductors
Categories: Single Diodes
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The WeEn Semiconductors WNSC10650T6J is a 650V, 10A Silicon Carbide (SiC) Schottky diode designed for high-efficiency power conversion applications. Featuring a 1.7V forward voltage at 10A and a low reverse leakage of 60 µA at 650V, this component offers superior performance characteristics. Its 5-DFN (8x8) exposed pad package facilitates efficient thermal management, with a maximum junction operating temperature of 175°C. The device exhibits zero reverse recovery time, making it ideal for high-frequency switching circuits. Applications include power supplies, solar inverters, and electric vehicle charging systems. This component is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
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