WNSC101200Q
DIODE SIL CARB 1.2KV 10A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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The WeEn Semiconductors WNSC101200Q is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. This through-hole component features a maximum DC reverse voltage of 1200 V and an average rectified current capability of 10 A. The forward voltage drop is a maximum of 1.6 V at 10 A. The diode exhibits a low reverse leakage current of 110 µA at 1200 V. With a junction operating temperature up to 175°C (Max), this device is packaged in a TO-220AC format. The WNSC101200Q is suitable for power factor correction, inrush current limiting, and general-purpose rectification in demanding power electronics applications. Its SiC technology ensures fast switching speeds with no significant reverse recovery time.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 510pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 10 A |
| Current - Reverse Leakage @ Vr | 110 µA @ 1200 V |
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