WNSC08650T6J
DIODE SIL CARBIDE 650V 8A 5DFNManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors WNSC08650T6J is a Silicon Carbide (SiC) Schottky Diode designed for high-performance applications. This 650V, 8A device features a low forward voltage of 1.7V at 8A and a minimal reverse leakage current of 50 µA at 650V. Engineered with SiC technology, it offers zero reverse recovery time, enabling faster switching speeds and reduced switching losses. The diode has a junction operating temperature up to 175°C (Max) and a capacitance of 267pF at 1V and 1MHz. Packaged in a 5-DFN (8x8) surface mount configuration, it is supplied on tape and reel. This component is suitable for use in power factor correction, server power supplies, solar inverters, and electric vehicle charging infrastructure.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 267pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
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