WNSC06650T6J
DIODE SIL CARBIDE 650V 6A 5DFNManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors WNSC06650T6J is a 650V, 6A Silicon Carbide (SiC) Schottky diode. This surface mount component features a 5-DFN (8x8) package. The forward voltage (Vf) is a maximum of 1.7V at 6A, with a reverse leakage current of 40 µA at 650V. The diode exhibits no reverse recovery time above 500mA, contributing to high-efficiency switching. It has a junction operating temperature of up to 175°C (Max) and a capacitance of 190pF at 1V and 1MHz. This device is suitable for applications in power factor correction, power supplies, and electric vehicle charging infrastructure. The component is supplied in Tape & Reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 190pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 6A |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 6 A |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
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