WNSC051200Q
DIODE SIL CARB 1.2KV 5A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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The WeEn Semiconductors WNSC051200Q is a Silicon Carbide (SiC) Schottky diode designed for high-voltage applications. Featuring a maximum DC reverse voltage rating of 1200 V and an average rectified current capability of 5 A, this component excels in demanding power conversion scenarios. Its forward voltage drop is specified at a maximum of 1.6 V at 5 A. The WNSC051200Q exhibits a low reverse leakage current of 50 µA at 1200 V and a junction operating temperature up to 175°C. Crucially, it offers no reverse recovery time above 500 mA, a key advantage for fast-switching power supplies and electric vehicle charging systems. The diode is housed in a standard TO-220AC package, facilitating through-hole mounting. This device finds utility in industries such as industrial power supplies, renewable energy systems, and automotive electronics.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 250pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 5A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 5 A |
| Current - Reverse Leakage @ Vr | 50 µA @ 1200 V |
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