WNSC04650T6J
DIODE SIL CARBIDE 650V 4A 5DFNManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors WNSC04650T6J is a 650V, 4A Silicon Carbide Schottky Diode designed for high-efficiency power conversion applications. This surface mount component, housed in a 5-DFN (8x8) package, features a low forward voltage of 1.7V at 4A and a minimal reverse leakage of 25 µA at 650V. Its advanced Silicon Carbide technology offers zero reverse recovery time, enabling faster switching speeds and reduced switching losses. The diode boasts a maximum operating junction temperature of 175°C and a capacitance of 141pF at 1V, 1MHz. It is supplied in Tape & Reel packaging for automated assembly. This component is widely utilized in power supplies, electric vehicle charging, solar inverters, and industrial motor drives.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 4-VSFN Exposed Pad |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 141pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 4A |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Current - Reverse Leakage @ Vr | 25 µA @ 650 V |
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