WNSC021200Q
DIODE SIL CARB 1.2KV 2A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
Quality Control: Learn More
WeEn Semiconductors WNSC021200Q is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This component offers a maximum reverse voltage (Vr) of 1200 V and a continuous average rectified current (Io) of 2 A. Featuring a low forward voltage drop of 1.6 V at 2 A and an exceptionally fast switching capability with no measurable reverse recovery time (> 500mA Io), it is ideal for demanding power conversion circuits. The device operates across a junction temperature range up to 175°C (Max) and is housed in a standard TO-220AC package, facilitating through-hole mounting. Its low reverse leakage current of 20 µA at 1200 V and a capacitance of 109pF @ 1V, 1MHz contribute to its efficiency. This SiC diode is suited for use in electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 109pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 2A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 1200 V |
| Voltage - Forward (Vf) (Max) @ If | 1.6 V @ 2 A |
| Current - Reverse Leakage @ Vr | 20 µA @ 1200 V |
Request a Quote
Clients Also Buy
WNSC6D16650CW6Q
DIODE SIL CARB 650V 16A TO247-3
WNSC2D0512006Q
DIODE SIL CARB 1.2KV 5A TO220AC
WNSC2D06650DJ
DIODE SIL CARBIDE 650V 6A DPAK
