NXPSC206506Q
DIODE SIL CARB 650V 20A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC206506Q is a 650V, 20A Silicon Carbide (SiC) Schottky diode. This through-hole component, housed in a TO-220AC package, offers a maximum forward voltage of 1.7V at 20A and a reverse leakage of 500 µA at 650V. The device features a junction operating temperature up to 175°C (Max) and a capacitance of 600pF @ 1V, 1MHz. Its SiC technology provides a "No Recovery Time" characteristic for currents greater than 500mA. This diode is suitable for applications in power factor correction, electric vehicle charging, and industrial power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 600pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 20A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 20 A |
| Current - Reverse Leakage @ Vr | 500 µA @ 650 V |
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