NXPSC16650B6J
DIODE SIL CARBIDE 650V 16A D2PAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors SiC Schottky Diode, 650V, 16A, NXPSC16650B6J. This surface mount component, packaged in a TO-263-3, D2PAK configuration, offers a maximum forward voltage (Vf) of 1.7V at 16A. Featuring a reverse leakage current of 100 µA at 650V and a capacitance of 534pF @ 1V, 1MHz, this diode exhibits no reverse recovery time above 500mA (Io). Its silicon carbide technology ensures high-temperature performance, with an operating junction temperature up to 175°C (Max). This component is suitable for applications in power supply, motor drive, and industrial automation sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 534pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 16 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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