NXPSC166506Q
DIODE SIL CARB 650V 16A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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The WeEn Semiconductors NXPSC166506Q is a 650V, 16A Silicon Carbide (SiC) Schottky diode packaged in a TO-220AC through-hole configuration. This component features a low forward voltage drop of 1.7V at 16A and an extremely fast switching speed characterized by a reverse recovery time (trr) of 0 ns, indicating no significant reverse recovery beyond 500mA. The device offers a maximum junction operating temperature of 175°C and a reverse leakage current of 100 µA at its rated 650V. Its capacitance at 1V is 534pF measured at 1MHz. This SiC Schottky diode is suitable for high-efficiency power conversion applications in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 534pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 16A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 16 A |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
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