NXPSC12650B6J
DIODE SIL CARBIDE 650V 12A D2PAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC12650B6J is a Silicon Carbide (SiC) Schottky diode designed for demanding power applications. This surface mount component, packaged in a TO-263-3, D2PAK, offers a maximum DC reverse voltage of 650V and an average rectified forward current capability of 12A. The forward voltage drop is characterized at 1.7V maximum at 12A. Notably, this device exhibits zero reverse recovery time for currents greater than 500mA (Io), contributing to enhanced switching efficiency. Leakage current is rated at 80 µA maximum at 650V. The device operates reliably at junction temperatures up to 175°C (Max) and is supplied in tape and reel packaging. The NXPSC12650B6J finds application in power factor correction, AC-DC and DC-DC converters, and electric vehicle charging systems. Its capacitance at 1V and 1MHz is 380pF.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 380pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 650 V |
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