NXPSC126506Q
DIODE SIL CARB 650V 12A TO220ACManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC126506Q is a 650V, 12A Silicon Carbide (SiC) Schottky diode in a TO-220AC package. This through-hole component exhibits a forward voltage (Vf) of 1.7V at its maximum forward current (If) of 12A. The reverse leakage current (Ir) is rated at 80 µA at 650V. Featuring zero reverse recovery time (trr), this diode is optimized for high-frequency switching applications. Its junction operating temperature can reach up to 175°C (Max). The capacitance @ Vr, F is specified as 380pF @ 1V, 1MHz. This device is suitable for power factor correction, switch mode power supplies, and solar inverters.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 380pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 12A |
| Supplier Device Package | TO-220AC |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 12 A |
| Current - Reverse Leakage @ Vr | 80 µA @ 650 V |
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