NXPSC10650X6Q
DIODE SIL CARB 650V 10A TO220FManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC10650X6Q is a Silicon Carbide (SiC) Schottky diode designed for high-efficiency power applications. This component features a 650 V maximum reverse voltage and a 10 A average rectified forward current. The forward voltage drop at 10 A is 1.7 V (Max). Its low leakage current is rated at 250 µA at 650 V. The NXPSC10650X6Q offers a TO-220F package for through-hole mounting, with an isolated tab and a maximum junction operating temperature of 175°C. Notably, it exhibits no reverse recovery time for currents over 500 mA. This SiC diode is suitable for use in power factor correction, electric vehicle chargers, and server power supplies.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-220-2 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 250 µA @ 650 V |
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