NXPSC10650D6J
DIODE SIL CARBIDE 650V 10A DPAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC10650D6J is a Silicon Carbide (SiC) Schottky diode designed for high-performance applications. This surface mount device, packaged in a DPAK (TO-252-3, DPAK (2 Leads + Tab), SC-63), offers a maximum DC reverse voltage of 650 V and an average rectified current handling capability of 10 A. The forward voltage drop at 10 A is a maximum of 1.7 V, and it exhibits a reverse leakage current of 250 µA at 650 V. Notably, the NXPSC10650D6J features zero reverse recovery time, exceeding 500mA (Io), a critical characteristic for high-frequency switching power supplies and power factor correction (PFC) circuits. The component operates at a maximum junction temperature of 175°C and has a capacitance specification of 300pF at 1V and 1MHz. It is supplied in Tape & Reel packaging. This diode is suitable for use in industries such as electric vehicle charging, industrial power supplies, and renewable energy systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | DPAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 250 µA @ 650 V |
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