NXPSC10650B6J
DIODE SIL CARBIDE 650V 10A D2PAKManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC10650B6J is a 650V, 10A Silicon Carbide (SiC) Schottky diode. This surface mount component, packaged in a D2PAK (TO-263-3, D2PAK (2 Leads + Tab), TO-263AB), offers a maximum forward voltage (Vf) of 1.7V at 10A. It features a reverse leakage current of 250 µA at 650V and a capacitance of 300pF @ 1V, 1MHz. The device boasts a maximum junction operating temperature of 175°C and exhibits no recovery time above 500mA. This SiC diode is suitable for applications in power factor correction, AC/DC and DC/DC converters, and electric vehicle charging infrastructure. It is supplied on tape and reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB |
| Mounting Type | Surface Mount |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 300pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 10A |
| Supplier Device Package | D2PAK |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
| Current - Reverse Leakage @ Vr | 250 µA @ 650 V |
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