NXPSC08650X6Q
DIODE SIL CARBIDE 650V 8A TO220FManufacturer: WeEn Semiconductors
Categories: Single Diodes
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WeEn Semiconductors NXPSC08650X6Q is a Silicon Carbide (SiC) Schottky diode. This component features a maximum DC reverse voltage (Vr) of 650 V and a continuous average rectified forward current (Io) of 8 A. The forward voltage drop (Vf) is specified at 1.7 V at 8 A. With a junction operating temperature up to 175°C (Max), it offers a reverse leakage current of 230 µA at 650 V and a capacitance of 260 pF at 1 V and 1 MHz. The NXPSC08650X6Q exhibits no reverse recovery time above 500mA (Io). It is housed in a TO-220F package, suitable for through-hole mounting. This diode is frequently utilized in power factor correction, photovoltaic inverters, and electric vehicle charging applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: TubeDatasheet:Download Free CAD Model:
Technical Details:
| Packaging | Tube |
| Package / Case | TO-220-2 Full Pack, Isolated Tab |
| Mounting Type | Through Hole |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Technology | SiC (Silicon Carbide) Schottky |
| Capacitance @ Vr, F | 260pF @ 1V, 1MHz |
| Current - Average Rectified (Io) | 8A |
| Supplier Device Package | TO-220F |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Current - Reverse Leakage @ Vr | 230 µA @ 650 V |
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